The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jul. 07, 2010
Kei Fujii, Itami, JP;
Takashi Ishizuka, Itami, JP;
Katsushi Akita, Itami, JP;
Youichi Nagai, Osaka, JP;
Tatsuya Tanabe, Itami, JP;
Kei Fujii, Itami, JP;
Takashi Ishizuka, Itami, JP;
Katsushi Akita, Itami, JP;
Youichi Nagai, Osaka, JP;
Tatsuya Tanabe, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structurehaving 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).