The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Apr. 30, 2010
Zhaohui Yang, North Oaks, MN (US);
Yasha Yi, New York, NY (US);
Catherine A. Leatherdale, Woodbury, MN (US);
Michael A. Haase, St. Paul, MN (US);
Terry L. Smith, Roseville, MN (US);
Zhaohui Yang, North Oaks, MN (US);
Yasha Yi, New York, NY (US);
Catherine A. Leatherdale, Woodbury, MN (US);
Michael A. Haase, St. Paul, MN (US);
Terry L. Smith, Roseville, MN (US);
3M Innovative Properties Company, Saint Paul, MN (US);
Abstract
A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.