The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Oct. 12, 2011
Jun Koyama, Kanagawa, JP;
Takeshi Osada, Kanagawa, JP;
Takanori Matsuzaki, Kanagawa, JP;
Kazuo Nishi, Yamanashi, JP;
Junya Maruyama, Kanagawa, JP;
Jun Koyama, Kanagawa, JP;
Takeshi Osada, Kanagawa, JP;
Takanori Matsuzaki, Kanagawa, JP;
Kazuo Nishi, Yamanashi, JP;
Junya Maruyama, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.