The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Nov. 29, 2010
Shirou Ozaki, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Yasushi Kobayashi, Kawasaki, JP;
Yuichi Minoura, Kawasaki, JP;
Shirou Ozaki, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Yasushi Kobayashi, Kawasaki, JP;
Yuichi Minoura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile