The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jul. 25, 2007
Masaharu Sato, Kanagawa, JP;
Masaharu Sato, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In conventional processes, a recombination rate of minority carrier accumulated between a diffusion layer of an anode and a diffusion layer of a cathode cannot be enhanced. An interlayer insulating filmis formed on a semiconductor substrate. An opening(first opening), an opening(second opening) and an openingare formed in the interlayer insulating film. The openingand the openingare formed above respective the p-type diffusion layerand the n-type diffusion layer. The openingis formed above the gap region that is a region between the p-type diffusion layerand the n-type diffusion layer. A contact plug, a contact plugand a contact plugare embedded in the opening, the openingand the openingrespectively. Both regions of the semiconductor substratelocated under the openingamong and located under the openingare doped with an impurity.