The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jul. 02, 2010
Bo-kyoung Ahn, Incheon-si, KR;
Seon-pil Jang, Seoul, KR;
Gug-rae JO, Asan-si, KR;
Hong-suk Yoo, Anyang-si, KR;
Chang-hoon Kim, Asan-si, KR;
Min-uk Kim, Seongnam-si, KR;
Ju-han Bae, Suwon-si, KR;
Bo-Kyoung Ahn, Incheon-si, KR;
Seon-Pil Jang, Seoul, KR;
Gug-Rae Jo, Asan-si, KR;
Hong-Suk Yoo, Anyang-si, KR;
Chang-Hoon Kim, Asan-si, KR;
Min-Uk Kim, Seongnam-si, KR;
Ju-Han Bae, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.