The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Feb. 10, 2011
Haruo Nakazawa, Nagano, JP;
Motoyoshi Kubouchi, Nagano, JP;
Hideaki Teranishi, Tokyo, JP;
Hideo Shimizu, Tokyo, JP;
Haruo Nakazawa, Nagano, JP;
Motoyoshi Kubouchi, Nagano, JP;
Hideaki Teranishi, Tokyo, JP;
Hideo Shimizu, Tokyo, JP;
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface.