The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Oct. 22, 2009
Masaki Yamanaka, Osaka, JP;
Hiroshi Nakatsuji, Osaka, JP;
Naoki Makita, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor, and the surface of the semiconductor layer () of the thin film diode is rougher than the surface of the semiconductor layer () of the thin film transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile