The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Oct. 19, 2010
Jong Hyuk Kang, Suwon-si, KR;
Junghan Shin, Yongin-si, KR;
Jae Byung Park, Seoul, KR;
Dong-hoon Lee, Yangsan-si, KR;
Minki Nam, Anseong-si, KR;
Kookheon Char, Seoul, KR;
Seonghoon Lee, Seoul, KR;
Wanki Bae, Seoul, KR;
Jaehoon Lim, Seoul, KR;
Joohyun Jung, Seoul, KR;
Jong Hyuk Kang, Suwon-si, KR;
Junghan Shin, Yongin-si, KR;
Jae Byung Park, Seoul, KR;
Dong-Hoon Lee, Yangsan-si, KR;
Minki Nam, Anseong-si, KR;
Kookheon Char, Seoul, KR;
Seonghoon Lee, Seoul, KR;
WanKi Bae, Seoul, KR;
Jaehoon Lim, Seoul, KR;
Joohyun Jung, Seoul, KR;
Samsung Display Co., Ltd., , KR;
SNU R&DB Foundation, , KR;
Abstract
A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.