The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Feb. 08, 2011
Olivier Menut, Saint Martin d'Hères, FR;
Laurent Bergher, Meylan, FR;
Emek Yesilada, Grenoble, FR;
Yorick Trouiller, Grenoble, FR;
Franck Foussadier, Grenoble, FR;
Raphaël Bingert, Crolles, FR;
Olivier Menut, Saint Martin d'Hères, FR;
Laurent Bergher, Meylan, FR;
Emek Yesilada, Grenoble, FR;
Yorick Trouiller, Grenoble, FR;
Franck Foussadier, Grenoble, FR;
Raphaël Bingert, Crolles, FR;
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and a second cell including a second MOS transistor of lower leakage current, wherein the second cell takes up the same surface area as the first cell, and the second MOS transistor has a gate of same length as the gate of the first MOS transistor across at least a first width in its central portion, and of greater length across at least a second width on either side of the central portion.