The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2013

Filed:

Dec. 26, 2011
Applicants:

Ji Hwan Kim, Seoul, KR;

Seong Je Park, Suwon-si, KR;

Jung Hwan Lee, Suwon-si, KR;

Myung Cho, Icheon-si, KR;

Beom Seok Hah, Seoul, KR;

Inventors:

Ji Hwan Kim, Seoul, KR;

Seong Je Park, Suwon-si, KR;

Jung Hwan Lee, Suwon-si, KR;

Myung Cho, Icheon-si, KR;

Beom Seok Hah, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of operating a semiconductor memory device includes performing a first program loop including a first program operation and a first verification operation in order to store a lower bit data of n-bit data in memory cells coupled to a page, performing a subprogram loop for memory cells of an erase state, having threshold voltages lower than a target voltage of a negative potential, so that the threshold voltages of the memory cells of the erase state become higher than the target voltage, and performing a second program loop including a second program operation and a second verification operation in order to store an upper bit data of the n-bit data in the memory cells.


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