The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2013

Filed:

Oct. 25, 2010
Applicants:

Krzysztof Domanski, Munich, DE;

Cornelius Christian Russ, Diedorf, DE;

David Alvarez, Munich, DE;

Wolfgang Soldner, Unterhaching, DE;

Inventors:

Krzysztof Domanski, Munich, DE;

Cornelius Christian Russ, Diedorf, DE;

David Alvarez, Munich, DE;

Wolfgang Soldner, Unterhaching, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 1/00 (2006.01); H02H 1/04 (2006.01); H02H 3/22 (2006.01); H02H 9/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier.


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