The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Feb. 15, 2011
Applicants:
Richard Gu, Plano, TX (US);
Daquan Huang, Allen, TX (US);
Inventors:
Richard Gu, Plano, TX (US);
Daquan Huang, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K 21/00 (2006.01); H03K 23/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
There are numerous types of dividers that have been employed at various frequency ranges. For many very high frequency ranges (i.e., above 30 GHz), dividers in CMOS have been developed. However, many of these designs use multiple stages. Here, however, a single stage divider has been provided that is adapted to operate at very high frequencies (i.e., 120 GHz). To accomplish this, it uses parasitic capacitances in conjunction with inductor(s) to form an LC tanks so as to take advantages of parasitics that normal degrade performance.