The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Jan. 13, 2010
Manjul Bhushan, Hopewell Junction, NY (US);
Mark B. Ketchen, Yorktown Heights, NY (US);
Qingqing Liang, Beijing, CN;
Edward P. Maciejewski, Hopewell Junction, NY (US);
Manjul Bhushan, Hopewell Junction, NY (US);
Mark B. Ketchen, Yorktown Heights, NY (US);
Qingqing Liang, Beijing, CN;
Edward P. Maciejewski, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A test structure is provided that utilizes a time division sampling technique along with a statistical modeling technique that uses metal-oxide-semiconductor field effect transistor (MOSFET) saturation and linear characteristics to measure the mean (average) and sigma (statistical characterization of the variation) of a large population of electrical characteristics of electrical devices (e.g., integrated circuits) at high speed. Such electrical characteristics or sampling parameters include drive currents, leakage, resistances, etc.