The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 09, 2007
Kazunori Taguchi, Fukuoka, JP;
Kenji Oota, Chiyoda-ku, JP;
Kazunori Taguchi, Fukuoka, JP;
Kenji Oota, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A pressure-contact semiconductor device () includes thermal buffer plates () and main electrode blocks () having flanges (), by which semiconductor substrate () having a pair of electrodes is sandwiched, disposed opposed to each side thereof, wherein the semiconductor substrate () is sealed in a gastight space by joining the flanges () to insulating container (). The semiconductor device () is configured such that the outermost periphery of the semiconductor substrate () is enclosed by hollow cylindrical insulator () fitted on outer peripheries of the main electrode blocks () in the gastight space with O-rings () fitted between the main electrode blocks () and the cylindrical insulator (), and sealed with reaction force from the O-rings ().