The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8455852 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 04, 2013

Filed:

Jan. 26, 2009
Applicants:

Nathaniel J. Quitoriano, Pacifica, CA (US);

Philip J. Kuekes, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Inventors:

Nathaniel J. Quitoriano, Pacifica, CA (US);

Philip J. Kuekes, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device () comprises an active region () sandwiched between a first electrode () and a second electrode (). The active region including a non-volatile dopant region () selectively formed and positioned within the active region.


Find Patent Forward Citations

Quitoriano, Nathaniel. (2013). Controlled placement of dopants in memristor active regions (U.S. Patent No. 8455852). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8455852

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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