The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Jan. 26, 2009
Applicants:
Nathaniel J. Quitoriano, Pacifica, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Inventors:
Nathaniel J. Quitoriano, Pacifica, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device () comprises an active region () sandwiched between a first electrode () and a second electrode (). The active region including a non-volatile dopant region () selectively formed and positioned within the active region.