The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 28, 2011
Applicants:
Hyo Geun Yoon, Yongin-si, KR;
Ji Yong Park, Seoul, KR;
Sun Jin Lee, Icheon-si, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.