The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 29, 2011
Kazumasa Yonekura, Kanagawa, JP;
Kazuo Tomita, Kanagawa, JP;
Kazumasa Yonekura, Kanagawa, JP;
Kazuo Tomita, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A manufacturing method of a semiconductor device is provided which can precisely control the depth of a wiring trench pattern, and which can suppress the damage on the wiring trench pattern. A second low dielectric constant film, a third low dielectric constant film, and a film for serving as a mask layer are laminated over a diffusion preventing film in that order. The film for serving as the mask layer is etched, and a wiring trench pattern is formed which has its bottom made of a surface of the third low dielectric constant film, so that a mask layer is formed. A first resist mask is removed by asking. A wiring trench is formed using the wiring trench pattern of the mask layer such that a bottom of the trench is comprised of the second low dielectric constant film. A layer from a top surface of the copper metal to the third low dielectric constant film is removed by a CMP method. Each low dielectric constant film has a dielectric constant lower than that of FSG, and the second low dielectric constant film has the dielectric constant lower than that of the third low dielectric constant film.