The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8455327 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 04, 2013

Filed:

Aug. 04, 2011
Applicants:

Chengwen Pei, Hopewell Junction, NY (US);

Xi LI, Hopewell Junction, NY (US);

Geng Wang, Hopewell Junction, NY (US);

Inventors:

Chengwen Pei, Hopewell Junction, NY (US);

Xi Li, Hopewell Junction, NY (US);

Geng Wang, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.


Find Patent Forward Citations

Pei, Chengwen. (2013). Trench capacitor with spacer-less fabrication process (U.S. Patent No. 8455327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8455327

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…