The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Dec. 14, 2011
Yong-hoon Son, Hwasung, KR;
Jong-wook Lee, Hwasung, KR;
Jong-hyuk Kang, Hwasung, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A vertical semiconductor device, a DRAM device, and associated methods, the vertical semiconductor device including single crystalline active bodies vertically disposed on an upper surface of a single crystalline substrate, each of the single crystalline active bodies having a first active portion on the substrate and a second active portion on the first active portion, and the first active portion having a first width smaller than a second width of the second active portion, a gate insulating layer on a sidewall of the first active portion and the upper surface of the substrate, a gate electrode on the gate insulating layer, the gate electrode having a linear shape surrounding the active bodies, a first impurity region in the upper surface of the substrate under the active bodies, and a second impurity region in the second active portion.