The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Sep. 13, 2011
Han Kyu Seong, Seoul, KR;
Hun Jae Chung, Gyunggi-do, KR;
Jung Ja Yang, Gyunggi-do, KR;
Cheol Soo Sone, Seoul, KR;
Han Kyu Seong, Seoul, KR;
Hun Jae Chung, Gyunggi-do, KR;
Jung Ja Yang, Gyunggi-do, KR;
Cheol Soo Sone, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.