The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8453656 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 04, 2013

Filed:

Jun. 25, 2010
Applicant:

Anastasios J. Tousimis, North Bethesda, MD (US);

Inventor:

Anastasios J. Tousimis, North Bethesda, MD (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber.


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