The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Apr. 06, 2012
Applicants:

Vassili Kireev, Sunnyvale, CA (US);

James Karp, Saratoga, CA (US);

Toan D. Tran, San Jose, CA (US);

Inventors:

Vassili Kireev, Sunnyvale, CA (US);

James Karp, Saratoga, CA (US);

Toan D. Tran, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H03K 19/00 (2006.01); H03K 25/00 (2006.01); H01F 21/02 (2006.01); H01F 29/00 (2006.01); H03K 19/0175 (2006.01); H03K 19/003 (2006.01); H01F 27/28 (2006.01); H01L 25/07 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G06F 17/5077 (2013.01); G06F 17/5081 (2013.01); H03K 19/017545 (2013.01); H03K 19/017509 (2013.01); H03K 19/00346 (2013.01); H01F 21/02 (2013.01); H01F 29/00 (2013.01); H01F 27/28 (2013.01); H01L 25/071 (2013.01); H01L 25/16 (2013.01);
Abstract

An embodiment of a circuit is described that includes a first inductor comprising a first end and a second end, where the first end of the first inductor forms an input node of the circuit. The embodiment of the circuit further includes a second inductor comprising a first end and a second end, where the second end of the first inductor is coupled to the first end of the second inductor forming an output node of the circuit; a resistor coupled to the second end of the second inductor; and an electrostatic discharge structure coupled to the output node and configured to provide an amount of electrostatic discharge protection, where the amount of electrostatic discharge protection is based on a parasitic bridge capacitance and a load capacitance metric.


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