The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Jan. 19, 2010
Applicants:

Shingo Nagano, Tokyo, JP;

Yuichi Masutani, Tokyo, JP;

Inventors:

Shingo Nagano, Tokyo, JP;

Yuichi Masutani, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film transistor array substrate includes a source line that is formed above a gate insulating layer covering a gate line, a semiconductor layer that is formed on the gate insulating layer and placed in a substantially whole area below a drain electrode, in a substantially whole area below a source electrode, in a substantially whole area below the source line and in a position opposite to the gate electrode, a pixel electrode that is formed directly on the drain electrode, a transparent conductive pattern that is formed directly on the source electrode and the source line in the same layer as the pixel electrode, and a counter electrode that is formed on an interlayer insulating layer covering the pixel electrode and the transparent conductive pattern and generates a fringe electric field with the pixel electrode.


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