The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jul. 28, 2011
Hong Long Ning, Suwon-si, KR;
Chang-oh Jeong, Suwon-si, KR;
Ji-young Park, Hwaseong-si, KR;
Sang-gab Kim, Seoul, KR;
Sung-haeng Cho, Cheonan-si, KR;
Yeon-hong Kim, Yongin-si, KR;
Jin-su Byun, Seongnam-si, KR;
Hong Long Ning, Suwon-si, KR;
Chang-Oh Jeong, Suwon-si, KR;
Ji-Young Park, Hwaseong-si, KR;
Sang-Gab Kim, Seoul, KR;
Sung-Haeng Cho, Cheonan-si, KR;
Yeon-Hong Kim, Yongin-si, KR;
Jin-Su Byun, Seongnam-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.