The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Apr. 08, 2009
Yoshinari Ikeda, Matsumoto, JP;
Shin Soyano, Shiojiri, JP;
Akira Morozumi, Okaya, JP;
Kenji Suzuki, Azumino, JP;
Yoshikazu Takahashi, Matsumoto, JP;
Yoshinari Ikeda, Matsumoto, JP;
Shin Soyano, Shiojiri, JP;
Akira Morozumi, Okaya, JP;
Kenji Suzuki, Azumino, JP;
Yoshikazu Takahashi, Matsumoto, JP;
Fuji Electric Co., Ltd., Kawasaki-Shi, JP;
Abstract
The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device () is provided with an insulating substrate (A), an insulating substrate (B) provided so as to face the insulating substrate (A), and a semiconductor element () disposed between the insulating substrate (A) and the insulating substrate (B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil () provided on the insulating substrate (A), and the emitter electrode is electrically connected to the metal foil () provided on the insulating substrate (B). As a result, heat generated by the semiconductor element () is efficiently dissipated from the upper and lower main surfaces of the semiconductor device ().