The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jan. 13, 2011
Lis Karen Nanver, Zoetermeer, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
Agata {hacek Over (S)}akić, Delft, NL;
Cornelis Sander Kooijman, Veldhoven, NL;
Gerard Nicolaas Anne Van Veen, Waalre, NL;
Lis Karen Nanver, Zoetermeer, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
Agata {hacek over (S)}akić, Delft, NL;
Cornelis Sander Kooijman, Veldhoven, NL;
Gerard Nicolaas Anne van Veen, Waalre, NL;
Other;
Abstract
The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step () of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step () of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.