The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 10, 2011
Hisao Inomata, Kanagawa, JP;
Hisao Inomata, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In one aspect, a semiconductor device includes a semiconductor substrate; and a transistor element including a parallel structure of a first-conductivity-type drift region and a second-conductivity-type column region, and a second-conductivity-type base region, the transistor element being formed on the semiconductor substrate. An outer peripheral region located outside an element forming region has a parallel structure of a first-conductivity-type drift region and a second-conductivity-type column region, and a second-conductivity-type annular diffusion region which is formed at a side of the base region and which is spaced apart from the base region. An innermost end and a neighboring portion thereof of the annular diffusion region are located on the column region, and an outermost end of the annular diffusion region is located outside an outermost peripheral column region. A field insulating film that covers the annular diffusion region is stacked on the semiconductor layer in the outer peripheral region.