The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Sep. 06, 2011
Applicant:
Naoto Saitoh, Chiba, JP;
Inventor:
Naoto Saitoh, Chiba, JP;
Assignee:
Seiko Instruments Inc., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2012.01);
U.S. Cl.
CPC ...
Abstract
To realize forming a trench MOSFET in which a depth of a P-body is changed on the same surface as a CMOS by employing steps with good controllability and without greatly increasing the number of manufacturing steps, provided is a trench MOSFET including an extended body region (), which is a part of a P-body region () and is provided in a vicinity of a deep trench () with a distance, the extended body region () being diffused deeper than the P-body region ().