The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 16, 2011
Jaeyoun Kim, Seoul, KR;
Jaihyuk Song, Seongnam-si, KR;
Manki Lee, Hwaseong-si, KR;
Bongtae Park, Seoul, KR;
Jaeyoun Kim, Seoul, KR;
Jaihyuk Song, Seongnam-si, KR;
Manki Lee, Hwaseong-si, KR;
Bongtae Park, Seoul, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes lateral and upper hydrogen blocking patterns disposed to prevent hydrogen from diffusing into the cell array region. Accordingly, hydrogen is effectively prevented from being trapped in a tunnel dielectric, thereby improving the reliability of the semiconductor device. In the method, when a cell array contact plug is formed, a lateral hydrogen blocking pattern and an upper hydrogen blocking pattern are formed at the same time. Thus, an additional process for forming a hydrogen blocking pattern is unnecessary, thereby simplifying a process.