The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jul. 12, 2010
Junxia Shi, Ithaca, NY (US);
Lester Fuess Eastman, Ithaca, NY (US);
Junxia Shi, Ithaca, NY (US);
Lester Fuess Eastman, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
In one example, we describe a new high performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET), which was fabricated using HfO2 as the surface passivation and gate insulator. The gate and drain leakage currents are drastically reduced to tens of nA, before breakdown. Without field plates, for 10 μm of gate-drain spacing, the off-state breakdown voltage is 1035V with a specific on-resistance of 0.9 mΩ-cm2. In addition, there is no current slump observed from the pulse measurements. This is the best performance reported on GaN-based, fast power-switching devices on sapphire, up to now, which efficiently combines excellent device forward, reverse, and switching characteristics. Other variations, features, and examples are also mentioned here.