The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jan. 12, 2011
Huang-chien Fu, Hsinchu, TW;
Shih-i Chen, Hsinchu, TW;
Yi Ming Chen, Hsinchu, TW;
Tzu Chieh Hsu, Hsinchu, TW;
Jhih-sian Wang, Hsinchu, TW;
Huang-Chien Fu, Hsinchu, TW;
Shih-I Chen, Hsinchu, TW;
Yi Ming Chen, Hsinchu, TW;
Tzu Chieh Hsu, Hsinchu, TW;
Jhih-Sian Wang, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.