The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 29, 2011
Seong-min Wang, Yongin, KR;
Joo-sun Yoon, Yongin, KR;
Tae-an Seo, Yongin, KR;
Jeong-hwan Kim, Yongin, KR;
Seong-Min Wang, Yongin, KR;
Joo-Sun Yoon, Yongin, KR;
Tae-An Seo, Yongin, KR;
Jeong-Hwan Kim, Yongin, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
An oxide semiconductor thin film transistor includes a gate electrode on a substrate, the gate electrode having a first area, a gate insulation layer on the gate electrode, the gate insulation layer covering the gate electrode, an active layer on the gate insulation layer, the active layer having a second area that is smaller than the first area, a source electrode on the active layer, the source electrode contacting a source region of the active layer, a drain electrode on the active layer, the drain electrode contacting a drain region of the active layer, and a passivation layer covering the active layer, the source electrode, and the drain electrode.