The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Dec. 03, 2010
Applicants:
Anthony Buonassisi, Cambridge, MA (US);
Mariana Bertoni, Medford, MA (US);
Bonna Newman, Cambridge, MA (US);
Inventors:
Anthony Buonassisi, Cambridge, MA (US);
Mariana Bertoni, Medford, MA (US);
Bonna Newman, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
Buonassisi, Anthony. (2013). Phonon-enhanced crystal growth and lattice healing (U.S. Patent No. 8450704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8450704
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile