The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Jul. 25, 2011
Applicants:

Stephen LA Lumondiere, Torrance, CA (US);

Terence Yeoh, Pasadena, CA (US);

Martin Siu Wo Leung, Redondo Beach, CA (US);

Neil A. Ives, Hawthorne, CA (US);

William T. Lotshaw, Rancho Palos Verdes, CA (US);

Steven C. Moss, Hermosa Beach, CA (US);

Inventors:

Stephen La Lumondiere, Torrance, CA (US);

Terence Yeoh, Pasadena, CA (US);

Martin Siu Wo Leung, Redondo Beach, CA (US);

Neil A. Ives, Hawthorne, CA (US);

William T. Lotshaw, Rancho Palos Verdes, CA (US);

Steven C. Moss, Hermosa Beach, CA (US);

Assignee:

The Aerospace Corporation, El Segundo, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various embodiments are directed to systems and methods for imaging subsurface features of a semiconductor object comprising a first region having a first doping property and a second region having a second doping property. The semiconductor object may comprise subsurface features and material between a surface of the semiconductor object and the subsurface features. The material may have an index of refraction that is greater than an index of refraction of a surrounding medium in contact with the surface of the semiconductor object. For example, a system may comprise an imaging device comprising an objective. The imaging device may be sensitive to a first wavelength. The system may also comprise an illumination source to emit illumination substantially at the first wavelength. The illumination may be directed towards the surface of the semiconductor object at a first angle relative to a normal of the surface. The first angle is greater than an acceptance angle of the objective of the imaging device. Also, the first wavelength may have a photonic energy substantially equal to a bandgap of the first region.


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