The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Sep. 29, 2011
Tsun-neng Yang, Taipei, TW;
Tsun-Neng Yang, Taipei, TW;
Atomic Energy Council—Institute of Nuclear Research, Lungtan, Taoyuan County, TW;
Abstract
An AlOthin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the AlOthin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.