The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Sep. 10, 2012
Fumitsugu Fukuyo, Hamamatsu, JP;
Kenshi Fukumitsu, Hamamatsu, JP;
Naoki Uchiyama, Hamamatsu, JP;
Ryuji Sugiura, Hamamatsu, JP;
Fumitsugu Fukuyo, Hamamatsu, JP;
Kenshi Fukumitsu, Hamamatsu, JP;
Naoki Uchiyama, Hamamatsu, JP;
Ryuji Sugiura, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
Multiphoton absorption is generated, so as to form a part which is intended to be cutdue to a molten processed regionwithin a silicon wafer, and then an adhesive sheetbonded to the silicon waferis expanded. This cuts the silicon waferalong the part which is intended to be cutwith a high precision into semiconductor chips. Here, opposing cut sectionsof neighboring semiconductor chipsare separated from each other from their close contact state, whereby a die-bonding resin layeris also cut along the part which is intended to be cut. Therefore, the silicon waferand die-bonding resin layercan be cut much more efficiently than in the case where the silicon waferand die-bonding resin layerare cut with a blade without cutting a base