The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jun. 19, 2012
Kentaro Tada, Kanagawa, JP;
Kenji Endo, Kanagawa, JP;
Kazuo Fukagai, Kanagawa, JP;
Tetsuro Okuda, Kanagawa, JP;
Masahide Kobayashi, Kanagawa, JP;
Kentaro Tada, Kanagawa, JP;
Kenji Endo, Kanagawa, JP;
Kazuo Fukagai, Kanagawa, JP;
Tetsuro Okuda, Kanagawa, JP;
Masahide Kobayashi, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ≦( 7/10)L from the one end surface in a resonator direction, 'L' is the resonator length, and 'Lt' is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.