The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jul. 25, 2008
Michael Kloeppel-riech, Friedberg, DE;
Katja Honnefeller, Friedrichsdorf, DE;
Norbert Smetana, Frankfurt am Main, DE;
Olaf Soerensen, Mainz, DE;
Juergen Seng, Kelkheim, DE;
Timo Hasenpflug, Frankfurt am Main, DE;
Michael Kloeppel-Riech, Friedberg, DE;
Katja Honnefeller, Friedrichsdorf, DE;
Norbert Smetana, Frankfurt am Main, DE;
Olaf Soerensen, Mainz, DE;
Juergen Seng, Kelkheim, DE;
Timo Hasenpflug, Frankfurt am Main, DE;
Braun GmbH, Kronberg, DE;
Abstract
The present invention relates to a hair care device () with a handle (), an operational head connected to the handle () having a hair treatment apparatus (), in particular a bristle field and/or a comb tooth field, and an ion-producing apparatus () for producing ions on the hair, having at least one ion outlet (). According to the invention, the hair care device () is characterized in that said hair care device has the feature of a back side () facing away from the hair treatment apparatus () and an ion-producing apparatus () for producing ions on the hair which has at least one switching unit, an ion source, an ion outlet () and a sheath surrounding the ion outlet (). Said hair care device () has in addition a grounding surface for the removal/limiting of electronic loads, which is arranged on a part of the housing in the area of the ion outlet, wherein the ion source has a potential level of −10 to −3 KV relative to the potential level of the grounding surface, the sheath has a potential level of −2.5 to −1 KV or of 20% to 50% of the potential level of the ion source relative to the potential level of the grounding surface, and the back side () of the device has a potential level of −500 to −100V or from 2% to 10% of the potential level of the ion source relative to the potential level of the grounding surface.