The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Jan. 26, 2012
Yoshito Nishioka, Kyoto, JP;
Yoichi Mugino, Kyoto, JP;
Tsuguki Noma, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (AlGa)InP layer (0≦x1≦1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a AlGaAs layer (0≦x2≦1). Each of the quantum well layers is formed of a GaAsPlayer (0≦x3≦1). The (AlGa)InP layer has a composition satisfying an inequality, x1>0.7. The AlGaAs layer has a composition satisfying an inequality, 0.4≦x2≦0.8.