The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Feb. 25, 2010
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Hiroyasu Fujiwara, Hamamatsu, JP;
Akira Higuchi, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Hiroyasu Fujiwara, Hamamatsu, JP;
Akira Higuchi, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
When light is incident to an antenna layer AAof a photocathode AA, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AAwhereupon near-field light is outputted from a through hole AA. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA. The photoelectric conversion layer AAreceives the near-field light outputted from the through hole AA. A region of the photoelectric conversion layer AAaround the through hole AAabsorbs the near-field light and generates photoelectrons (e) in an amount according to the intensity of the near-field light. The photoelectrons (e) generated in the photoelectric conversion layer AAare outputted to the outside.