The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Nov. 25, 2009
Francois Perruchot, Grenoble, FR;
Emmanuel Defay, Voreppe, FR;
Patrice Rey, Saint Jean Moirans, FR;
Lianjun Liu, Chandler, AZ (US);
Sergio Pacheco, Scottsdale, AZ (US);
Francois Perruchot, Grenoble, FR;
Emmanuel Defay, Voreppe, FR;
Patrice Rey, Saint Jean Moirans, FR;
Lianjun Liu, Chandler, AZ (US);
Sergio Pacheco, Scottsdale, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Commissariat Ă l'Energie Atomique et aux Energies Alternatives (CEA), Paris, FR;
Abstract
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.