The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Apr. 27, 2011
Xiangdong Chen, Poughquag, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Weipeng LI, Beacon, NY (US);
Dae-gyu Park, Poughquaq, NY (US);
Melanie J. Sherony, Wappingers Falls, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Weipeng Li, Beacon, NY (US);
Dae-Gyu Park, Poughquaq, NY (US);
Melanie J. Sherony, Wappingers Falls, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator.