The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Mar. 23, 2009
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The nitride semi-conductive light emitting layer in this invention comprises a single crystal substratefor epitaxial growth, a first buffer layer, an n-type nitride semi-conductive layer, a second buffer layer, a third buffer layer, a light emitting layer, and a p-type nitride semi-conductive layer. The first buffer layeris laminated to a top side of the single crystal substrate. The n-type nitride semi-conductive layeris laminated to a top side of the first buffer layer. The third buffer layeris laminated to a top side of the n-type nitride semi-conductive layerwith the second buffer layerbeing interposed therebetween. The light emitting layeris laminated to a top side of the third buffer layer. The p-type nitride semi-conductive layeris laminated to a top side of the light emitting layer. The third buffer layerserves as a planarized base for growth of the light emitting layerso as to reduce a threading dislocation and a residual distortion in the light emitting layer. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer. The third buffer layeris doped with an Si impurity serving as a donor.