The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Feb. 18, 2009
Hiroaki Nakamura, Sodegaura, JP;
Masatoshi Saitou, Sodegaura, JP;
Tetsuo Tsutsui, Kasuga, JP;
Takeshi Yasuda, Kasuga, JP;
Hiroaki Nakamura, Sodegaura, JP;
Masatoshi Saitou, Sodegaura, JP;
Tetsuo Tsutsui, Kasuga, JP;
Takeshi Yasuda, Kasuga, JP;
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Kyusyu University, Fukuoka-shi, JP;
Abstract
A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by CH—CH═CH—CH, or a distyryl structure expressed by CH—CH═CH—CH—CH═CH—CHeach without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.