The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2013

Filed:

Jul. 19, 2010
Applicants:

Inanc Meric, New York, NY (US);

Kenneth Shepard, Ossining, NY (US);

Noah J. Tremblay, New York, NY (US);

Philip Kim, New York, NY (US);

Colin P. Nuckolls, New York, NY (US);

Inventors:

Inanc Meric, New York, NY (US);

Kenneth Shepard, Ossining, NY (US);

Noah J. Tremblay, New York, NY (US);

Philip Kim, New York, NY (US);

Colin P. Nuckolls, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.


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