The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Feb. 02, 2010
Satoru Fujii, Osaka, JP;
Koji Arita, Osaka, JP;
Satoru Mitani, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory element comprises a first electrode (); a second electrode (); and a resistance variable layer () disposed between the first electrode () and the second electrode (), resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the electrodes (); the resistance variable layer () including a first tantalum oxide layer () comprising a first tantalum oxide and a second tantalum oxide layer () comprising a second tantalum oxide which is different in oxygen content from the first tantalum oxide, the first tantalum oxide layer and the second tantalum oxide layer being stacked together, and being configured such that 0<x<2.5 is satisfied when the first tantalum oxide is expressed as TaOand x<y≦2.5 is satisfied when the second tantalum oxide is expressed as TaO; and the second electrode () being in contact with the second tantalum oxide layer () and comprising platinum and tantalum.