The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Sep. 05, 2008
Karl D. Hobart, Upper Marlboro, MD (US);
Tatyana I Feygelson, Springfield, VA (US);
Marko J Tadjer, Virginia Beach, VA (US);
Joshua D. Caldwell, Accokeek, MD (US);
Kendrick X Liu, Alexandria, VA (US);
Francis J. Kub, Arnold, MD (US);
Michael a Mastro, Fairfax, VA (US);
James E Butler, Huntingtown, MD (US);
Karl D. Hobart, Upper Marlboro, MD (US);
Tatyana I Feygelson, Springfield, VA (US);
Marko J Tadjer, Virginia Beach, VA (US);
Joshua D. Caldwell, Accokeek, MD (US);
Kendrick X Liu, Alexandria, VA (US);
Francis J. Kub, Arnold, MD (US);
Michael A Mastro, Fairfax, VA (US);
James E Butler, Huntingtown, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.