The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Sep. 09, 2011
Qinghuang Lin, Yorktown Heights, NY (US);
Terry A. Spooner, Clifton Park, NY (US);
Darshan D. Gandhi, Troy, NY (US);
Christy S. Tyberg, Mahopac, NY (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Terry A. Spooner, Clifton Park, NY (US);
Darshan D. Gandhi, Troy, NY (US);
Christy S. Tyberg, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.