The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Jan. 26, 2012
Mitsuhiko Noda, Yokohama, JP;
Mitsuhiko Noda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a method of manufacturing a nonvolatile semiconductor memory includes forming a plurality of memory cell transistors and a plurality of selection transistors on a substrate. The method further includes burying first and second insulators successively between memory cell transistors and between a memory cell transistor and a selection transistor, and forming the first and second insulators successively on side surfaces of selection transistors, the side surfaces facing a space between the selection transistors. The method further includes burying third to fifth insulators successively between the selection transistors via the first and second insulators. The method further includes removing the second and fourth insulators by a first etching so that the second and fourth insulators partially remain between the selection transistors. The method further includes removing the second and fourth insulators remaining between the selection transistors by a second etching performed after the first etching.